Looking for a used or new machine tool?
1,000s to choose from
Machinery-Locator
Ceratizit MPU XYZ Machine Tools MPU Bodor MPU Hurco MPU Mills CNC MPU 2021

Machinery-Locator
The online search from the pages of Machinery Market.

Bliss 25Ton press
Throw size 2.5 inches, platen size 60*37mm,max revs 155pm
Throw size 2.5 inches, platen size 60*37mm,max revs 155pm...
Vero Technologies

Be seen in all the right places!

Metal Show & TIB 2024 Plastics & Rubber Thailand Intermach 2024 Metaltech 2024 Subcon 2024 Advanced Engineering 2024

University ‘spin-out’ gets Government funding

Posted on 14 Sep 2014 and read 2522 times
University ‘spin-out’ gets Government funding Irresistible Materials (IM) — a ‘spin-out’ company from the University of Birmingham — has received £235,000 of funding from the Government-run Technology Strategy Board and ‘business angels’ in the USA.

This comes as Mark Shepherd takes up the post of CEO and Tim Hazell of Mercia Fund Management joins the board.

Mr Shepherd, who has expertise in commercialising technology through product development and licensing of intellectual property world-wide, has been the CEO of several technology businesses, including 1-Ltd and start-ups from the University of Manchester and Queen Mary University of London.

IM was created in 2010 to develop and commercialise the University of Birmingham’s photo-resist technology, which allows manufacturers to fabricate very small features for micro-electronic devices.

As these features get smaller, a new technology will be needed. IM’s solution is based on a fullerene material developed at the university, and the company has started talking with the key industry suppliers to evaluate samples.

Mr Shepherd said: “It is an exciting time for IM. The team has made significant advances over recent months in order to prove the capabilities of the technology and enable us to engage further with the major players in the industry.

“I am looking forward to seeing the company’s developments turn into real products that enable the next generation of semiconductor devices.”